GALLIUM NITRIDE SEMICONDUCTOR ELEMENT

PROBLEM TO BE SOLVED: To provide a high-power gallium nitride Schottky diode element.SOLUTION: A gallium nitride-based semiconductor Schottky diode manufactured from an n+ doped GaN diode having a thickness of 1-6 μm is provided on a sapphire substrate. An n- doped GaN diode is provided on the n+ doped GaN diode patterned in a plurality of slender fingers, a metal layer is provided on the n- doped GaN layer to form Schottky junction between the n- GaN layer and the metal layer. A layer thickness, a length and a width of the slender finger are optimized so as to obtain an element having a breakdown voltage in excess of 500 V, a current capacity in excess of 1 ampere and a forward voltage of less than 3 V.