SOLID-STATE IMAGING DEVICE

SOLID-STATE IMAGING DEVICE

PROBLEM TO BE SOLVED: To provide a solid-state imaging device that can, for example, improve photoelectric conversion efficiency and reduce undesirable current due to crystal defect.SOLUTION: A solid-state imaging device comprises a photodiode. In the photodiode, a first-conductivity-type region and...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: MOMOSE HISAYO
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To provide a solid-state imaging device that can, for example, improve photoelectric conversion efficiency and reduce undesirable current due to crystal defect.SOLUTION: A solid-state imaging device comprises a photodiode. In the photodiode, a first-conductivity-type region and a second-conductivity-type region are joined. The first-conductivity-type region has a first semiconductor region and a plurality of second semiconductor regions. The first semiconductor region is made from a material containing Si as a main component. Each of the plurality of second semiconductor regions is made from a material containing SiGe(0