SILICON SINGLE CRYSTAL WAFER
PROBLEM TO BE SOLVED: To provide a silicon single crystal wafer at a low cost, which does not cause pressure resistance failure or leakage failure when manufacturing a device and which has a low oxygen concentration.SOLUTION: The silicon single crystal wafer is cut from a silicon single crystal ingo...
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| creator | SUGAWARA TAKAYO MATSUMOTO KATSU HOSHI RYOJI KAMATA HIROYUKI |
| description | PROBLEM TO BE SOLVED: To provide a silicon single crystal wafer at a low cost, which does not cause pressure resistance failure or leakage failure when manufacturing a device and which has a low oxygen concentration.SOLUTION: The silicon single crystal wafer is cut from a silicon single crystal ingot grown by the Czochralski method. The silicon single crystal wafer is characterized in that it is cut from the silicon single crystal ingot having an oxygen concentration of 8×10atoms/cm(ASTM'79) or less, FPD and LEP are not detected by selective etching, and a defect area wherein LSTD is detected by an infrared scattering method is included. |
| format | Patent |
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The silicon single crystal wafer is characterized in that it is cut from the silicon single crystal ingot having an oxygen concentration of 8×10atoms/cm(ASTM'79) or less, FPD and LEP are not detected by selective etching, and a defect area wherein LSTD is detected by an infrared scattering method is included.</description><language>eng</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; CHEMISTRY ; CRYSTAL GROWTH ; INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES ; MEASURING ; METALLURGY ; PHYSICS ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; TESTING ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2012</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20121004&DB=EPODOC&CC=JP&NR=2012188293A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20121004&DB=EPODOC&CC=JP&NR=2012188293A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SUGAWARA TAKAYO</creatorcontrib><creatorcontrib>MATSUMOTO KATSU</creatorcontrib><creatorcontrib>HOSHI RYOJI</creatorcontrib><creatorcontrib>KAMATA HIROYUKI</creatorcontrib><title>SILICON SINGLE CRYSTAL WAFER</title><description>PROBLEM TO BE SOLVED: To provide a silicon single crystal wafer at a low cost, which does not cause pressure resistance failure or leakage failure when manufacturing a device and which has a low oxygen concentration.SOLUTION: The silicon single crystal wafer is cut from a silicon single crystal ingot grown by the Czochralski method. The silicon single crystal wafer is characterized in that it is cut from the silicon single crystal ingot having an oxygen concentration of 8×10atoms/cm(ASTM'79) or less, FPD and LEP are not detected by selective etching, and a defect area wherein LSTD is detected by an infrared scattering method is included.</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>CHEMISTRY</subject><subject>CRYSTAL GROWTH</subject><subject>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</subject><subject>MEASURING</subject><subject>METALLURGY</subject><subject>PHYSICS</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>TESTING</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2012</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJAJ9vTxdPb3Uwj29HP3cVVwDooMDnH0UQh3dHMN4mFgTUvMKU7lhdLcDEpuriHOHrqpBfnxqcUFicmpeakl8V4BRgaGRoYWFkaWxo7GRCkCALUqIUk</recordid><startdate>20121004</startdate><enddate>20121004</enddate><creator>SUGAWARA TAKAYO</creator><creator>MATSUMOTO KATSU</creator><creator>HOSHI RYOJI</creator><creator>KAMATA HIROYUKI</creator><scope>EVB</scope></search><sort><creationdate>20121004</creationdate><title>SILICON SINGLE CRYSTAL WAFER</title><author>SUGAWARA TAKAYO ; MATSUMOTO KATSU ; HOSHI RYOJI ; KAMATA HIROYUKI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2012188293A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2012</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>CHEMISTRY</topic><topic>CRYSTAL GROWTH</topic><topic>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</topic><topic>MEASURING</topic><topic>METALLURGY</topic><topic>PHYSICS</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>TESTING</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>SUGAWARA TAKAYO</creatorcontrib><creatorcontrib>MATSUMOTO KATSU</creatorcontrib><creatorcontrib>HOSHI RYOJI</creatorcontrib><creatorcontrib>KAMATA HIROYUKI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SUGAWARA TAKAYO</au><au>MATSUMOTO KATSU</au><au>HOSHI RYOJI</au><au>KAMATA HIROYUKI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SILICON SINGLE CRYSTAL WAFER</title><date>2012-10-04</date><risdate>2012</risdate><abstract>PROBLEM TO BE SOLVED: To provide a silicon single crystal wafer at a low cost, which does not cause pressure resistance failure or leakage failure when manufacturing a device and which has a low oxygen concentration.SOLUTION: The silicon single crystal wafer is cut from a silicon single crystal ingot grown by the Czochralski method. The silicon single crystal wafer is characterized in that it is cut from the silicon single crystal ingot having an oxygen concentration of 8×10atoms/cm(ASTM'79) or less, FPD and LEP are not detected by selective etching, and a defect area wherein LSTD is detected by an infrared scattering method is included.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING METALLURGY PHYSICS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH TESTING UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | SILICON SINGLE CRYSTAL WAFER |
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