SILICON SINGLE CRYSTAL WAFER

SILICON SINGLE CRYSTAL WAFER

PROBLEM TO BE SOLVED: To provide a silicon single crystal wafer at a low cost, which does not cause pressure resistance failure or leakage failure when manufacturing a device and which has a low oxygen concentration.SOLUTION: The silicon single crystal wafer is cut from a silicon single crystal ingo...

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Bibliographische Detailangaben
Hauptverfasser: SUGAWARA TAKAYO, MATSUMOTO KATSU, HOSHI RYOJI, KAMATA HIROYUKI
Format: Patent
Sprache:eng
Schlagworte:
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMISTRY
CRYSTAL GROWTH
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES
MEASURING
METALLURGY
PHYSICS
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
TESTING
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a silicon single crystal wafer at a low cost, which does not cause pressure resistance failure or leakage failure when manufacturing a device and which has a low oxygen concentration.SOLUTION: The silicon single crystal wafer is cut from a silicon single crystal ingot grown by the Czochralski method. The silicon single crystal wafer is characterized in that it is cut from the silicon single crystal ingot having an oxygen concentration of 8×10atoms/cm(ASTM'79) or less, FPD and LEP are not detected by selective etching, and a defect area wherein LSTD is detected by an infrared scattering method is included.