MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a semiconductor device which has both reliability and electrical characteristics.SOLUTION: A semiconductor device comprises a power MOSFET and a protection circuit formed on the same semiconductor substrate 1. The power MOSFET is a trench gate vertical P-channel MOSF...

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Bibliographische Detailangaben
Hauptverfasser:	NAKAZAWA YOSHITO, SUZUKI HIROISA, FUJISHIRO ATSUSHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a semiconductor device which has both reliability and electrical characteristics.SOLUTION: A semiconductor device comprises a power MOSFET and a protection circuit formed on the same semiconductor substrate 1. The power MOSFET is a trench gate vertical P-channel MOSFET, and a conductivity type of its gate electrode 6 is a P-type. The protection circuit comprises a planar gate horizontal type offset P-channel MOSFET, and a conductivity type of its gate electrode 10 is an N-type. The gate electrode 6 and the gate electrode 10 are formed in separate processes.