POWER SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a power semiconductor device that is manufactured by a simple manufacturing process and has high dielectric strength.SOLUTION: A power semiconductor device comprises: a SiC substrate 1 of a first conductivity type; a drift layer 2 of the first conductivity type that is formed on the SiC substrate 1 and has a recess structure 2a formed on the surface thereof; a termination portion 3 of a second conductivity type disposed in a surface of the recess structure 2a; Schottky electrodes 4 and 5 that are formed on the drift layer 2 so as to overlap one end of the termination portion 3 and are Schottky-connected to the drift layer 2; an insulating film 6 formed on the drift layer 2 so as to cover the termination portion 3; and a conductive film 8 that is formed on the insulating film 6 and is electrically connected to the Schottky electrode 5. The resistance value of the conductive film 8 ranges from 10( /sq.) or more to 10( /sq.) or less.