SEMICONDUCTOR STORAGE DEVICE

PROBLEM TO BE SOLVED: To temporarily increase storage capacity.SOLUTION: A semiconductor storage device includes a first silicon pillar constituting a pair of columnar sections extending vertically with respect to a semiconductor substrate in a dummy bit line region, and a memory string formed along a connection section of the pair of columnar sections; a second silicon pillar constituting a pair of columnar sections extending vertically with respect to the semiconductor substrate in a shunt region, and a memory string formed along a connection section of the pair of columnar sections; a source line which is connected to one of the pair of columnar sections of each of the first and second silicon pillars, and is formed above the memory string; first wiring which is connected to the other of the pair of columnar sections of the first silicon pillar, and is formed at the same level as the source line; and second wiring which is connected to the other of the pair of columnar sections of the second silicon pillar, and is formed at the same level as the source line. The first wiring is connected to a dummy bit line, and the first and second wiring are connected to each other at the same level.