SEMICONDUCTOR DEVICE AND LIGHT-EMITTING DEVICE USING THE SAME

SEMICONDUCTOR DEVICE AND LIGHT-EMITTING DEVICE USING THE SAME

PROBLEM TO BE SOLVED: To reduce occupied area of capacitance created between a gate electrode and a capacitance electrode facing each other across an interlayer insulation film.SOLUTION: A film thickness of an interlayer insulation film at a part on a channel region is thicker than that of a surroun...

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Bibliographische Detailangaben
1. Verfasser: KAKINUMA NOBUAKI
Format: Patent
Sprache:eng
Schlagworte:
ADVERTISING
BASIC ELECTRIC ELEMENTS
CRYPTOGRAPHY
DISPLAY
DISPLAYING
EDUCATION
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
LABELS OR NAME-PLATES
PHYSICS
SEALS
SEMICONDUCTOR DEVICES
SIGNS
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Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To reduce occupied area of capacitance created between a gate electrode and a capacitance electrode facing each other across an interlayer insulation film.SOLUTION: A film thickness of an interlayer insulation film at a part on a channel region is thicker than that of a surrounding area, and capacitance is created at this part between a capacitance electrode and a gate electrode facing each other.