DEPOSITION METHOD, DEPOSITION APPARATUS, SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

PROBLEM TO BE SOLVED: To provide a deposition method and a deposition apparatus of a cobalt film having low solubility into a plating liquid and excellent in barrier property against Cu diffusion in a single film.SOLUTION: A deposition method of a carbon-containing cobalt film comprises: a process o...

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Hauptverfasser:	KOJIMA YASUHIKO, SHINONOME SHUJI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a deposition method and a deposition apparatus of a cobalt film having low solubility into a plating liquid and excellent in barrier property against Cu diffusion in a single film.SOLUTION: A deposition method of a carbon-containing cobalt film comprises: a process of conveying a wafer W into a processing chamber 1 of a deposition apparatus 100 and arranging the wafer W on a stage 3; a process of adjusting a pressure in the processing chamber 1 and a temperature of the wafer W; a process of depositing the carbon-containing cobalt film on a surface of the wafer W in a CVD method by supplying and mixing Co(CO)and acetylene in the processing chamber 1; a process of stopping supply of a deposition material and vacuuming the processing chamber 1; and a process of conveying the wafer W from the processing chamber 1.