SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SUBSTRATE PROCESSING APPARATUS

SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SUBSTRATE PROCESSING APPARATUS

PROBLEM TO BE SOLVED: To improve step coverage with controlling an oxygen concentration in a film thereby to enable a thin film of low resistance to be formed.SOLUTION: A semiconductor manufacturing method comprises: a process of forming a tantalum-contained layer on a substrate by supplying a mater...

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Hauptverfasser: HARADA KAZUHIRO, ITAYA HIDEJI
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator HARADA KAZUHIRO
ITAYA HIDEJI
description PROBLEM TO BE SOLVED: To improve step coverage with controlling an oxygen concentration in a film thereby to enable a thin film of low resistance to be formed.SOLUTION: A semiconductor manufacturing method comprises: a process of forming a tantalum-contained layer on a substrate by supplying a material gas containing tantalum and discharging the material gas under conditions that CVD reaction is developed in a processing chamber that houses the substrate; and forming a tantalum oxide layer on a surface of the tantalum-contained layer by supplying an ozone gas by a short pulse to the processing chamber and discharging the ozone gas to oxygenize the surface of the tantalum-contained layer. Accordingly, a tantalum oxide film is formed on the substrate.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SUBSTRATE PROCESSING APPARATUS
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