SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SUBSTRATE PROCESSING APPARATUS

PROBLEM TO BE SOLVED: To improve step coverage with controlling an oxygen concentration in a film thereby to enable a thin film of low resistance to be formed.SOLUTION: A semiconductor manufacturing method comprises: a process of forming a tantalum-contained layer on a substrate by supplying a material gas containing tantalum and discharging the material gas under conditions that CVD reaction is developed in a processing chamber that houses the substrate; and forming a tantalum oxide layer on a surface of the tantalum-contained layer by supplying an ozone gas by a short pulse to the processing chamber and discharging the ozone gas to oxygenize the surface of the tantalum-contained layer. Accordingly, a tantalum oxide film is formed on the substrate.