PLASMA PROCESSING METHOD

PROBLEM TO BE SOLVED: To provide a plasma processing method capable of reducing sparse and dense micro-loading in a pattern where the dense space width is 20 nm or less.SOLUTION: In the plasma processing method performing plasma etching of the silicon in a specimen having a mask of a pattern, where...

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Bibliographische Detailangaben
Hauptverfasser:	ISHIMURA HIROAKI, SAKAGUCHI MASAMICHI, NISHIDA TOSHIAKI, FURUBAYASHI HITOSHI, WATANABE YUTO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a plasma processing method capable of reducing sparse and dense micro-loading in a pattern where the dense space width is 20 nm or less.SOLUTION: In the plasma processing method performing plasma etching of the silicon in a specimen having a mask of a pattern, where the dense space width is 20 nm or less, on a silicon substrate, etching of silicon is performed using a mixed gas of Clgas and Ngas under a pressure of 0.1 Pa while applying a time modulated intermittent high frequency power having a duty ratio of 5-50% to the specimen.