SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING THE SAME

PROBLEM TO BE SOLVED: To provide a semiconductor element which significantly reduces a soft error rate, and a method for manufacturing the same.SOLUTION: In the semiconductor element, a semiconductor substrate (100) has a first type first doped region (102) under a first well region (104) doped with...

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Hauptverfasser: TIAN HONG, MICHAEL P WOO, WANG XIAODONG, CRAIG S LAGE
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide a semiconductor element which significantly reduces a soft error rate, and a method for manufacturing the same.SOLUTION: In the semiconductor element, a semiconductor substrate (100) has a first type first doped region (102) under a first well region (104) doped with first type impurities, the first well region is electrically connected to the first doped region, an isolation region (206) is formed between the first well region and the first doped region (102), the isolation region is electrically connected to a second well region, and the isolation region and the second well region are doped with a second impurity type opposite to the first impurity type. In the method for manufacturing the same which further includes a step of forming a second doped region in the first well region and under the isolation region, a third doped region having the first type impurities can be formed on the isolation region.