METHOD OF MANUFACTURING EPITAXIAL WAFER

PROBLEM TO BE SOLVED: To prevent decrease in impurity concentration on the interface of a silicon wafer and an epitaxial layer.SOLUTION: The method of manufacturing an epitaxial wafer includes a first step (step S3) for performing hydrogen baking of a silicon wafer in a reactor, and a second step (s...

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Hauptverfasser:	KASAMATSU TAKAAKI, KOBAYASHI HIDENORI, OKAMOTO KIMITAKA
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Zusammenfassung:	PROBLEM TO BE SOLVED: To prevent decrease in impurity concentration on the interface of a silicon wafer and an epitaxial layer.SOLUTION: The method of manufacturing an epitaxial wafer includes a first step (step S3) for performing hydrogen baking of a silicon wafer in a reactor, and a second step (step S4) for forming an epitaxial layer on the surface of the silicon wafer subjected to hydrogen baking by introducing a silicon material gas and a dopant gas into the reactor. In the first step, the dopant gas is introduced into the reactor so as to compensate for the decrease in impurity concentration on the surface layer of the silicon wafer due to out diffusion. Consequently, an epitaxial wafer in which the decrease in impurity concentration on the interface of the silicon wafer and the epitaxial layer is minimized can be produced.