SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a semiconductor device having an integrated circuit which reduces a current value of a magnetoresistive element used for read and write of information without increase in area of memory cells when viewed from above, and inhibits read/write errors and a short circuit between magnetoresistive elements.SOLUTION: A semiconductor device comprises an in-plane magnetization type magnetoresistive element MRD using a spin-transfer torque writing method arranged on a principal surface of a semiconductor substrate, which can change a magnetization state depending on a current flow direction, and first wiring BL electrically connected with the magnetoresistive element MRD and extending in a direction along the principal surface. An aspect ratio of the magnetoresistive element MRD when viewed from above has a value other than 1. In a memory cell region where a plurality of memory cells MC in each of which the magnetoresistive element MRD and a switching element are electrically connected are arrayed, regarding the magnetoresistive elements MRD in a longer direction when viewed from above, more than one magnetoresistive elements MRD neighboring with each other are arranged so as not to lie on the same straight line extending along the longer direction.