SEMICONDUCTOR DEVICE MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which improves cutting performance of an adhesive layer formed on a semiconductor wafer having singulated chip regions and inhibits contamination and the like of the semiconductor chip caused by cutting scraps and the like...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: IWAMI FUMIHIRO, YOSHIMURA ATSUSHI
Format: Patent
Sprache:eng
Schlagworte:
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Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which improves cutting performance of an adhesive layer formed on a semiconductor wafer having singulated chip regions and inhibits contamination and the like of the semiconductor chip caused by cutting scraps and the like of the adhesive layer.SOLUTION: In an embodiment, a liquid adhesive is coated on a semiconductor wafer 3 with keeping a wafer shape by a surface protection film 4 applied to a first face 3a and an adhesive layer 7 is formed. A support sheet 9 having an adhesive layer 8 is applied to a second face 3b of the semiconductor wafer 3. After peeling the surface protection film 4, the support sheet 9 is extended and the adhesive layer 7 including the adhesive and filled in dicing trenches 1 is cut. With keeping an extended state of the support sheet 9, cleaning is performed. Adhesive strengths of parts corresponding to the dicing trenches 1 of the adhesive layer 8 are selectively reduced before the cleaning process.