DEFECT INSPECTION METHOD AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To make an inspection of presence/absence of a defect in an imprint pattern efficient.SOLUTION: A conductive layer 2 is formed on an under layer 1. An imprint pattern 4 is formed on the conductive layer 2. An electrolytic solution 6 is brought into contact with the imprint patt...

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Bibliographische Detailangaben
1. Verfasser:	MATSUOKA YASUO
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING BASIC ELECTRIC ELEMENTS CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES PERFORMING OPERATIONS PHYSICS PRINTED CIRCUITS SEMICONDUCTOR DEVICES SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDEDFOR SHAPING OR JOINING OF PLASTICS TESTING TRANSPORTING WORKING OF PLASTICS WORKING OF SUBSTANCES IN A PLASTIC STATE, IN GENERAL
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To make an inspection of presence/absence of a defect in an imprint pattern efficient.SOLUTION: A conductive layer 2 is formed on an under layer 1. An imprint pattern 4 is formed on the conductive layer 2. An electrolytic solution 6 is brought into contact with the imprint pattern 4, and an electrode 7 is brought into contact with the electrolytic solution 6. A voltage is applied between the conductive layer 2 and an electrode 6, and a current flowing between the conductive layer 2 and the electrode 7 is measured. The presence/absence of the defect of the imprint pattern 4 is determined based on the result of the measurement of the current.