METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device in which a concentration of an impurity metal remained in wiring is low.SOLUTION: This manufacturing method includes the steps of: forming an insulation film on a semiconductor substrate; forming a recess part in the...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	NASU HAYATO, WATABE TADAYOSHI, USUI TAKAMASA
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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