METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device in which a concentration of an impurity metal remained in wiring is low.SOLUTION: This manufacturing method includes the steps of: forming an insulation film on a semiconductor substrate; forming a recess part in the insulation film; forming a precursor film containing a predetermined metal element on the surface of the insulation film having the recess part formed therein; depositing a wiring forming film on the precursor film; heating the deposited article in an oxidizing atmosphere, thereby making the precursor film react with the insulation film, and forming a self-forming barrier film containing a compound as a main component, which includes a predetermined metal element and a constituent element of the insulation film on the boundary surface of the precursor film and the insulation film; diffusing and moving the unreacted predetermined metal elements in the wiring forming film, and making the elements react with oxygen in the atmosphere on the surface of the wiring forming film, and making the reacted elements precipitated as an unreacted metal oxide film; removing the unreacted metal oxide film; depositing the same material as the wiring forming film on the wiring forming film after the step of removing the unreacted metal oxide film, and additionally depositing the wiring forming film; and subsequently flattening the wiring forming film until the insulation film outside the recess part is exposed, to form a wiring structure.