METHOD OF MANUFACTURING CARBON MEMBER FOR ION IMPLANTATION DEVICE

PROBLEM TO BE SOLVED: To provide a method by which scattering of particles and contamination of impurities in fabricating a semiconductor element can be suppressed stably, and a carbon member for an ion implantation device having a high flexural strength can be manufactured with ease at a low cost.SOLUTION: In a method of manufacturing a member for ion implantation device, 20-100 pts.mass of dispersion liquid of a phenol resin whose ash content is 0.5 mass% or less in terms of solid content is mixed to 100 pts.mass of graphite powder obtained by graphitizing a carbon material containing 65-100 mass% mosaic-like coke and whose ash content amount is 1000 mass ppm or less and whose average particle size is 5-100 μm. Then the mixture is dried and comminuted to produce molding powder. Thermo-compression molding is then performed to the molding powder while adjusting a pressure so as to obtain a compact having a bulk density of 1.2-1.75 g/cm. Next, the obtained compact is burned in an inert atmosphere to perform graphitization treatment, and densified in halogen content gas to obtain an ash content of 20 mass ppm or less.