STABILIZED PHOTORESIST STRUCTURE FOR ETCHING PROCESS

PROBLEM TO BE SOLVED: To provide a method for forming features in an etch layer.SOLUTION: A first mask is formed over the etch layer and the first mask defines a plurality of spaces with widths. The first mask is laterally etched and the etched first mask defines a plurality of spaces with widths that are greater than the widths of the spaces of the first mask. A sidewall layer is formed over the etched first mask and the sidewall layer defines a plurality of spaces with widths that are less than the widths of the spaces defined by the etched first mask. Features are etched into the etch layer through the sidewall layer, and have widths that are smaller than the widths of the spaces defined by the etched first mask. The mask and sidewall layer are removed.