LASER DOPING METHOD AND SEMICONDUCTOR SUBSTRATE MANUFACTURED BASED ON THE METHOD

PROBLEM TO BE SOLVED: To provide a laser doping method which reduces the performance deterioration of a solar battery resulted from ridges formed by laser radiation.SOLUTION: A laser doping method comprises: a contact process in which dopants are contacted with a surface of a semiconductor substrate...

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Hauptverfasser:	YOSHINUMA TAKASHI, TAMOTO HIROKI, SHIMA HIDEKAZU, TANIGUCHI KIMIHIRO, WATANABE KOSUKE
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a laser doping method which reduces the performance deterioration of a solar battery resulted from ridges formed by laser radiation.SOLUTION: A laser doping method comprises: a contact process in which dopants are contacted with a surface of a semiconductor substrate; a first radiation process in which a laser beam is radiated to a first radiation region on a surface of the semiconductor substrate; and a second radiation process in which a second radiation region including ridges formed in the first radiation region is set and a laser beam is radiated to the second radiation region. The problem is solved by the laser doping method in which the laser beam is radiated to dope the dopants.