APPARATUS AND METHOD FOR PRODUCING POLYCRYSTALLINE SILICON HAVING REDUCED AMOUNT OF BORON COMPOUND BY VENTING SYSTEM WITH INERT GAS

APPARATUS AND METHOD FOR PRODUCING POLYCRYSTALLINE SILICON HAVING REDUCED AMOUNT OF BORON COMPOUND BY VENTING SYSTEM WITH INERT GAS

PROBLEM TO BE SOLVED: To provide an apparatus and method for manufacturing polycrystalline silicon having a reduced amount of boron compounds.SOLUTION: The apparatus feeds Ar gas in a trichlorosilane (TCS) line 22, which connects a trichlorosilane (TCS) tank 2a and a series of distillation units 4 t...

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Bibliographische Detailangaben
Hauptverfasser: NAKANO MAMORU, KAMEI TAKESHI
Format: Patent
Sprache:eng
Schlagworte:
CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOIDCHEMISTRY
CHEMISTRY
COMPOUNDS THEREOF
INORGANIC CHEMISTRY
METALLURGY
NON-METALLIC ELEMENTS
PERFORMING OPERATIONS
PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
THEIR RELEVANT APPARATUS
TRANSPORTING
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide an apparatus and method for manufacturing polycrystalline silicon having a reduced amount of boron compounds.SOLUTION: The apparatus feeds Ar gas in a trichlorosilane (TCS) line 22, which connects a trichlorosilane (TCS) tank 2a and a series of distillation units 4 to 6. The distillation units 4 to 6 have a pressure transducer 4e to 6e and a pressure independent control valve (PIC-V) 4f to 6f positioned on a vent gas line 26 for discharging vent gas from the distillation units 4 to 6. Ar gas is fed to the TCS line 22 with higher pressure than the pressure set for opening the PIC-V 4f to 6f. The TCS is distilled by the distillation units 4 to 6 with continuously discharging vent gas from the distillation units 4 to 6.