REFLECTIVE EXPOSURE METHOD

PROBLEM TO BE SOLVED: To provide a reflective exposure method capable of optimizing the exit angle of a reflective mask and the incidence angle of a wafer while taking into account both the specular reflection light from the reflective mask and the light reflected on the pattern sidewall.SOLUTION: The reflective exposure method includes a step for selecting a specific pattern, e.g. a pattern of smallest size, in a reflective mask, a step for calculating the electromagnetic field near the mask for the pattern, and a step for determining the propagation direction of highest intensity from the distribution of diffraction light which is determined from the electromagnetic field near the mask thus calculated. The reflective exposure method further includes a step for adjusting the inclination of the mask surface so that the propagation direction thus determined has a predetermined exist angle, and a step for adjusting the wafer surface to a predetermined angle in the direction along which the light, propagating from the mask surface in the propagation direction, impinges on the wafer through a projection optical system.