METHOD OF MANUFACTURING ELECTRONIC COMPONENT

PROBLEM TO BE SOLVED: To fill around a recess with a low-melting-point metal well by preventing aggregation of the low-melting-point metal being deposited at high temperature, and forming a barrier layer having sufficient barrier properties and wettability.SOLUTION: The method of manufacturing an el...

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Bibliographische Detailangaben
Hauptverfasser: WAKAYANAGI SHUNICHI, YAMAZAKI KOJI
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To fill around a recess with a low-melting-point metal well by preventing aggregation of the low-melting-point metal being deposited at high temperature, and forming a barrier layer having sufficient barrier properties and wettability.SOLUTION: The method of manufacturing an electronic component includes a step for depositing a first barrier layer 404 composed of TiNx on an object 306 to be treated by plasma treatment by applying a first bias power to an electrode 301 which is in contact with the object 306 to be treated under a pressure of 4-20 Pa, a step for depositing a second barrier layer 405 composed of TiNx on the first barrier layer by plasma treatment by applying a second bias power, which imparts incident ion energy lower than that of the first bias power, to the electrode 301 under a pressure of 4-20 Pa, a step for depositing a third barrier layer 409 composed of Ti on the second barrier layer 405, and a step for filling above the third barrier layer 409 with a low-melting-point metal 406.