NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND MANUFACTURING METHOD OF THE SAME

PROBLEM TO BE SOLVED: To provide a nitride semiconductor light-emitting element capable of employing an upper and lower electrodes structure, which is excellent in internal quantum efficiency, light extraction efficiency, a drive voltage and mass productivity, and a manufacturing method of the nitride semiconductor light-emitting element.SOLUTION: There are disclosed a nitride semiconductor light-emitting element including a substrate for growth of a sapphire substrate on which unevenness processing is performed, an n-type nitride semiconductor layer, a light-emitting layer, a p-type nitride semiconductor layer, a transparent conductive layer and a reflection layer of a dielectric in this order, and a manufacturing method of the same. The reflection layer of the dielectric includes: a SiOlayer formed in thickness decreasing a total reflection critical angle so as to increase an amount of light beams totally reflected; a periodic structure of a SiOlayer and a SiN layer formed such that a reflection rate in a direction at an oblique angle of 25° becomes maximum; and a periodic structure of a SiOlayer and a SiN layer formed such that a reflection rate in a vertical direction becomes maximum.