METHODS FOR MANUFACTURING MULTILAYER THIN FILM PATTERN AND DISPLAY DEVICE

PROBLEM TO BE SOLVED: To provide methods for manufacturing a multilayer thin film pattern and a display device which can easily obtain a pattern having a desired shape.SOLUTION: The methods for manufacturing the multilayer thin film pattern and the display device perform the sequential steps of: for...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	ITO YASUYOSHI, HAYASHI MASAMI
Format:	Patent
Sprache:	eng
Schlagworte:	ADVERTISING BASIC ELECTRIC ELEMENTS CRYPTOGRAPHY DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING DISPLAY DISPLAYING EDUCATION ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FREQUENCY-CHANGING LABELS OR NAME-PLATES NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS SEALS SEMICONDUCTOR DEVICES SIGNS TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide methods for manufacturing a multilayer thin film pattern and a display device which can easily obtain a pattern having a desired shape.SOLUTION: The methods for manufacturing the multilayer thin film pattern and the display device perform the sequential steps of: forming an interlayer insulating film 1 on a substrate; forming a first thin film 2 having conductivity on the interlayer insulating film 1; forming a second thin film 3 on the first thin film 2; forming a resist pattern 5 having a film thickness difference on the second thin film 3 through multitone exposure; exposing the interlayer insulating film 1 in a region in which the resist pattern does not exist by etching the second thin film 3 and the first thin film 2 through the resist pattern 5 having the film thickness difference; removing a thin film portion 5b of the resist pattern by ashing the resist pattern 5 having the film thickness difference; and etching the second thin film 3 through a resist pattern 5c from which the thin film portion 5b has been removed.