SPUTTERING METHOD

PROBLEM TO BE SOLVED: To control the composition of a deposited film in the reactive sputtering caused by the simultaneous discharge of a plurality of targets.SOLUTION: By making different the amounts of reactive gas respectively supplied to targets, a reactive product with reactive gas is sputtered...

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Bibliographische Detailangaben
1. Verfasser:	MINAMI TAKUJI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To control the composition of a deposited film in the reactive sputtering caused by the simultaneous discharge of a plurality of targets.SOLUTION: By making different the amounts of reactive gas respectively supplied to targets, a reactive product with reactive gas is sputtered from one target, and a target material is sputtered from the other target. Thus, the composition of the deposited film can be controlled. Further, by executing the sputtering with one target in a poison mode and the other target in a metal mode, a compound consisting of the reactive product and the metal is film-deposited.