SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

PROBLEM TO BE SOLVED: To compensate the presence of a defect in the p-well ion-implant process step, enhance manufacturing yield of semiconductor devices, and reduce device unit cost.SOLUTION: The method comprises: introducing a dopant type into a semiconductor layer to define a well region 114 of t...

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Hauptverfasser: PETER ALMERN LOSEE, ZACHARY MATTHEW STUM, ARTHUR STEPHEN D, KEVIN SEAN MATOCHA
Format: Patent
Sprache:eng
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