SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

PROBLEM TO BE SOLVED: To compensate the presence of a defect in the p-well ion-implant process step, enhance manufacturing yield of semiconductor devices, and reduce device unit cost.SOLUTION: The method comprises: introducing a dopant type into a semiconductor layer to define a well region 114 of the semiconductor layer, where the well region 114 comprises a channel region 121; and introducing a dopant type into the well region 114 to define a multiple implant region substantially coinciding with the well region 114 but excluding the channel region 121.