SUBSTRATE PROCESSING APPARATUS, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND BAFFLE STRUCTURE OF THE SUBSTRATE PROCESSING APPARATUS

PROBLEM TO BE SOLVED: To provide a substrate processing apparatus which generates plasma having higher density and achieves higher throughput of substrate processing compared to conventional substrate processing apparatuses.SOLUTION: A substrate processing apparatus 410 has: a reaction container 431 provided with a coil 432 at an outer periphery and formed in a cylindrical shape; a lid 453a provided at an end part of the reaction container 431; a gas introduction port 433 provided at the lid 453a; a first plate 460 provided between the gas introduction port 433 and an upper end of the coil 432; a second plate 460a provided between the first plate and an upper end of the coil; and a substrate processing chamber 445 provided in the reaction container in a direction which is different from the lid 453a; and a gas exhaust part 480 connecting with the substrate processing chamber 445.