MULTILAYER DEVICE MANUFACTURING METHOD AND MULTI LAYER DEVICE

PROBLEM TO BE SOLVED: To provide a manufacturing method of manufacturing thin multilayer devices without accompanying deterioration in yield and breakage of a semiconductor device chip.SOLUTION: A manufacturing method of a multilayer device in which a plurality of semiconductor devices are layered,...

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Bibliographische Detailangaben
Hauptverfasser: KODAMA SHOICHI, KAWAI AKIHITO, KIM YONG SUK, MAEDA NOBUHIDE
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To provide a manufacturing method of manufacturing thin multilayer devices without accompanying deterioration in yield and breakage of a semiconductor device chip.SOLUTION: A manufacturing method of a multilayer device in which a plurality of semiconductor devices are layered, utilizes a disk-shaped support substrate of a size substantially the same as the size of a semiconductor device wafer and comprises: forming a provisional wafer by disposing a plurality of semiconductor device chips on the support substrate and encapsulating a rear face side with a resin; grinding the encapsulation resin of the provisional wafer to thin the provisional wafer; forming a bonded wafer by bonding the thinned provisional wafer with the semiconductor device wafer; and forming, after removing the support substrate, a through electrode connecting the semiconductor device on the semiconductor device chip with the semiconductor device on the semiconductor device wafer.