METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, EXPOSURE METHOD OF EXPOSURE DEVICE, EXPOSURE DEVICE AND LIGHT SOURCE FOR EXPOSURE DEVICE
PROBLEM TO BE SOLVED: To enhance exposure characteristics.SOLUTION: A semiconductor device is manufactured to have (a) a step for preparing an exposure device comprising (a1) a light-emitting section having a cathode 101 and an anode 102 and emitting the EUV light, (a2) a heating light source 100 wh...
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| creator | SHIRAI SEIICHIRO |
| description | PROBLEM TO BE SOLVED: To enhance exposure characteristics.SOLUTION: A semiconductor device is manufactured to have (a) a step for preparing an exposure device comprising (a1) a light-emitting section having a cathode 101 and an anode 102 and emitting the EUV light, (a2) a heating light source 100 which heats the cathode 101 and anode 102, and (a3) an exposure section which irradiates a substrate with the EUV light through a mask. Furthermore, a semiconductor device is manufactured to have (b) a step for heating the cathode 101 and anode 102 by the heating light source 100, (c) a step for applying a voltage between the cathode 101 and anode 102 following to the step (b) and emitting the EUV light by plasma excitation of predetermined atoms between the cathode 101 and anode 102, and (d) a step for guiding the EUV light to the exposure section and exposing a photosensitive film formed above the substrate in the exposure section. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_JP2012129439A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JP2012129439A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_JP2012129439A3</originalsourceid><addsrcrecordid>eNrjZGjzdQ3x8HdR8HdT8HX0C3VzdA4JDfL0c1cIdvX1dPb3cwl1DvEPUnBxDfN0dtVRcI0I8A8ODXJVQGiDC2GogQgoOPq5KPh4unuEKAT7hwYBBdyABqIp4mFgTUvMKU7lhdLcDEpuriHOHrqpBfnxqcUFicmpeakl8V4BRgaGRoZGlibGlo7GRCkCAHXfPmk</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, EXPOSURE METHOD OF EXPOSURE DEVICE, EXPOSURE DEVICE AND LIGHT SOURCE FOR EXPOSURE DEVICE</title><source>esp@cenet</source><creator>SHIRAI SEIICHIRO</creator><creatorcontrib>SHIRAI SEIICHIRO</creatorcontrib><description>PROBLEM TO BE SOLVED: To enhance exposure characteristics.SOLUTION: A semiconductor device is manufactured to have (a) a step for preparing an exposure device comprising (a1) a light-emitting section having a cathode 101 and an anode 102 and emitting the EUV light, (a2) a heating light source 100 which heats the cathode 101 and anode 102, and (a3) an exposure section which irradiates a substrate with the EUV light through a mask. Furthermore, a semiconductor device is manufactured to have (b) a step for heating the cathode 101 and anode 102 by the heating light source 100, (c) a step for applying a voltage between the cathode 101 and anode 102 following to the step (b) and emitting the EUV light by plasma excitation of predetermined atoms between the cathode 101 and anode 102, and (d) a step for guiding the EUV light to the exposure section and exposing a photosensitive film formed above the substrate in the exposure section.</description><language>eng</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; BASIC ELECTRIC ELEMENTS ; CINEMATOGRAPHY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROGRAPHY ; HOLOGRAPHY ; MATERIALS THEREFOR ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; SEMICONDUCTOR DEVICES ; X-RAY TECHNIQUE</subject><creationdate>2012</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20120705&DB=EPODOC&CC=JP&NR=2012129439A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20120705&DB=EPODOC&CC=JP&NR=2012129439A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SHIRAI SEIICHIRO</creatorcontrib><title>METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, EXPOSURE METHOD OF EXPOSURE DEVICE, EXPOSURE DEVICE AND LIGHT SOURCE FOR EXPOSURE DEVICE</title><description>PROBLEM TO BE SOLVED: To enhance exposure characteristics.SOLUTION: A semiconductor device is manufactured to have (a) a step for preparing an exposure device comprising (a1) a light-emitting section having a cathode 101 and an anode 102 and emitting the EUV light, (a2) a heating light source 100 which heats the cathode 101 and anode 102, and (a3) an exposure section which irradiates a substrate with the EUV light through a mask. Furthermore, a semiconductor device is manufactured to have (b) a step for heating the cathode 101 and anode 102 by the heating light source 100, (c) a step for applying a voltage between the cathode 101 and anode 102 following to the step (b) and emitting the EUV light by plasma excitation of predetermined atoms between the cathode 101 and anode 102, and (d) a step for guiding the EUV light to the exposure section and exposing a photosensitive film formed above the substrate in the exposure section.</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MATERIALS THEREFOR</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>X-RAY TECHNIQUE</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2012</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZGjzdQ3x8HdR8HdT8HX0C3VzdA4JDfL0c1cIdvX1dPb3cwl1DvEPUnBxDfN0dtVRcI0I8A8ODXJVQGiDC2GogQgoOPq5KPh4unuEKAT7hwYBBdyABqIp4mFgTUvMKU7lhdLcDEpuriHOHrqpBfnxqcUFicmpeakl8V4BRgaGRoZGlibGlo7GRCkCAHXfPmk</recordid><startdate>20120705</startdate><enddate>20120705</enddate><creator>SHIRAI SEIICHIRO</creator><scope>EVB</scope></search><sort><creationdate>20120705</creationdate><title>METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, EXPOSURE METHOD OF EXPOSURE DEVICE, EXPOSURE DEVICE AND LIGHT SOURCE FOR EXPOSURE DEVICE</title><author>SHIRAI SEIICHIRO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2012129439A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2012</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MATERIALS THEREFOR</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>X-RAY TECHNIQUE</topic><toplevel>online_resources</toplevel><creatorcontrib>SHIRAI SEIICHIRO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SHIRAI SEIICHIRO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, EXPOSURE METHOD OF EXPOSURE DEVICE, EXPOSURE DEVICE AND LIGHT SOURCE FOR EXPOSURE DEVICE</title><date>2012-07-05</date><risdate>2012</risdate><abstract>PROBLEM TO BE SOLVED: To enhance exposure characteristics.SOLUTION: A semiconductor device is manufactured to have (a) a step for preparing an exposure device comprising (a1) a light-emitting section having a cathode 101 and an anode 102 and emitting the EUV light, (a2) a heating light source 100 which heats the cathode 101 and anode 102, and (a3) an exposure section which irradiates a substrate with the EUV light through a mask. Furthermore, a semiconductor device is manufactured to have (b) a step for heating the cathode 101 and anode 102 by the heating light source 100, (c) a step for applying a voltage between the cathode 101 and anode 102 following to the step (b) and emitting the EUV light by plasma excitation of predetermined atoms between the cathode 101 and anode 102, and (d) a step for guiding the EUV light to the exposure section and exposing a photosensitive film formed above the substrate in the exposure section.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES X-RAY TECHNIQUE |
| title | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, EXPOSURE METHOD OF EXPOSURE DEVICE, EXPOSURE DEVICE AND LIGHT SOURCE FOR EXPOSURE DEVICE |
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