METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, EXPOSURE METHOD OF EXPOSURE DEVICE, EXPOSURE DEVICE AND LIGHT SOURCE FOR EXPOSURE DEVICE

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, EXPOSURE METHOD OF EXPOSURE DEVICE, EXPOSURE DEVICE AND LIGHT SOURCE FOR EXPOSURE DEVICE

PROBLEM TO BE SOLVED: To enhance exposure characteristics.SOLUTION: A semiconductor device is manufactured to have (a) a step for preparing an exposure device comprising (a1) a light-emitting section having a cathode 101 and an anode 102 and emitting the EUV light, (a2) a heating light source 100 wh...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: SHIRAI SEIICHIRO
Format: Patent
Sprache:eng
Schlagworte:
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CINEMATOGRAPHY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
X-RAY TECHNIQUE
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Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To enhance exposure characteristics.SOLUTION: A semiconductor device is manufactured to have (a) a step for preparing an exposure device comprising (a1) a light-emitting section having a cathode 101 and an anode 102 and emitting the EUV light, (a2) a heating light source 100 which heats the cathode 101 and anode 102, and (a3) an exposure section which irradiates a substrate with the EUV light through a mask. Furthermore, a semiconductor device is manufactured to have (b) a step for heating the cathode 101 and anode 102 by the heating light source 100, (c) a step for applying a voltage between the cathode 101 and anode 102 following to the step (b) and emitting the EUV light by plasma excitation of predetermined atoms between the cathode 101 and anode 102, and (d) a step for guiding the EUV light to the exposure section and exposing a photosensitive film formed above the substrate in the exposure section.