ELECTROCHEMICAL ETCHING OF SEMICONDUCTOR

PROBLEM TO BE SOLVED: To provide an electrochemical etching method for a semiconductor by which the semiconductor is improved in adhesion with metal.SOLUTION: In the method, (a) there is provided a semiconductor wafer having front and rear faces which have oxide emitter layers, and having a p-n junc...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	REESE JASON A, ALLARDYCE GEORGE R, GARY HAM
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS THEREFOR CHEMISTRY ELECTROLYTIC OR ELECTROPHORETIC PROCESSES METALLURGY PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROMOBJECTS
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide an electrochemical etching method for a semiconductor by which the semiconductor is improved in adhesion with metal.SOLUTION: In the method, (a) there is provided a semiconductor wafer having front and rear faces which have oxide emitter layers, and having a p-n junction; (b) the semiconductor wafer is brought into contact with a composition containing one and more bifluoride sources, one and more fluoride salts, or a mixture of these sources and salts, and one and more metal ion sources; (c) an electric current is generated in the composition; (d) a cycle in which an anode current is applied for a predetermined time and then the anode current is shut off for a predetermined time, and repeated until nano-pores are formed in the oxide emitter layers of the semiconductor wafer; and (e) a cathode current and light are applied to deposit metal on the nano-pore layers.