METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a CMP (chemical mechanical polishing) method using general-purpose polishing solution, by which recesses and seams in a wiring part can be minified, and which can finish a surface with oxidation resistance, and to provide a method of manufacturing a semiconductor dev...

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Hauptverfasser: MORI YASUMASA, MATSUI YUKITERU, KAWAGUCHI TORU, SHIDA HIROTAKA, EDA HAJIME, MINAMI FUKUGAKU, KODERA MASAKO
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creator MORI YASUMASA
MATSUI YUKITERU
KAWAGUCHI TORU
SHIDA HIROTAKA
EDA HAJIME
MINAMI FUKUGAKU
KODERA MASAKO
description PROBLEM TO BE SOLVED: To provide a CMP (chemical mechanical polishing) method using general-purpose polishing solution, by which recesses and seams in a wiring part can be minified, and which can finish a surface with oxidation resistance, and to provide a method of manufacturing a semiconductor device.SOLUTION: A method of manufacturing a semiconductor device includes: a processed body manufacturing step of burying a conductive material into a groove to form a wiring part, and forming a conductive film made of the conductive material, on an insulating film having the groove provided on a semiconductor substrate; a first polishing processing step of performing chemical mechanical polishing to the conductive film while leaving the wiring part buried in the groove; and a second polishing processing step of polishing the insulating film and the wiring part while supplying a chemical mechanical polishing slurry and a water solution of a compound represented by the following formula (1).
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subjects ADHESIVES
BASIC ELECTRIC ELEMENTS
CHEMISTRY
DYES
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE
METALLURGY
MISCELLANEOUS APPLICATIONS OF MATERIALS
MISCELLANEOUS COMPOSITIONS
NATURAL RESINS
PAINTS
POLISHES
SEMICONDUCTOR DEVICES
title METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
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