METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a CMP (chemical mechanical polishing) method using general-purpose polishing solution, by which recesses and seams in a wiring part can be minified, and which can finish a surface with oxidation resistance, and to provide a method of manufacturing a semiconductor dev...

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Bibliographische Detailangaben
Hauptverfasser:	MORI YASUMASA, MATSUI YUKITERU, KAWAGUCHI TORU, SHIDA HIROTAKA, EDA HAJIME, MINAMI FUKUGAKU, KODERA MASAKO
Format:	Patent
Sprache:	eng
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS POLISHES SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a CMP (chemical mechanical polishing) method using general-purpose polishing solution, by which recesses and seams in a wiring part can be minified, and which can finish a surface with oxidation resistance, and to provide a method of manufacturing a semiconductor device.SOLUTION: A method of manufacturing a semiconductor device includes: a processed body manufacturing step of burying a conductive material into a groove to form a wiring part, and forming a conductive film made of the conductive material, on an insulating film having the groove provided on a semiconductor substrate; a first polishing processing step of performing chemical mechanical polishing to the conductive film while leaving the wiring part buried in the groove; and a second polishing processing step of polishing the insulating film and the wiring part while supplying a chemical mechanical polishing slurry and a water solution of a compound represented by the following formula (1).