OXIDE SINTERED BODY AND SPUTTERING TARGET
PROBLEM TO BE SOLVED: To provide an oxide sintered body which is suitably used in the production of an oxide semiconductor film for a display device, the sintered body concerned having both high conductivity and high relative density and forming an oxide semiconductor film which has high carrier mob...
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| creator | GOTO YASUSHI IWASAKI YUKI YONEDA YOICHIRO TOKUHIRA MASAYA |
| description | PROBLEM TO BE SOLVED: To provide an oxide sintered body which is suitably used in the production of an oxide semiconductor film for a display device, the sintered body concerned having both high conductivity and high relative density and forming an oxide semiconductor film which has high carrier mobility.SOLUTION: The oxide sintered body is obtained by mixing powdered zinc oxide, powdered tin oxide and powdered indium oxide together and then sintering the mixture. In addition, when the sintered body of an oxide is subjected to X-ray diffraction, it has a phase of ZnSnOas a primary phase and a solid solution of In/InO-ZnSnOin which In and/or InOis solid-solved in ZnSnO, and a phase of ZnInO(x, y and z are optional positive integers) is not detected. |
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In addition, when the sintered body of an oxide is subjected to X-ray diffraction, it has a phase of ZnSnOas a primary phase and a solid solution of In/InO-ZnSnOin which In and/or InOis solid-solved in ZnSnO, and a phase of ZnInO(x, y and z are optional positive integers) is not detected.</description><language>eng</language><subject>ARTIFICIAL STONE ; BASIC ELECTRIC ELEMENTS ; CABLES ; CEMENTS ; CERAMICS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS ; CONCRETE ; CONDUCTORS ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; INSULATORS ; LIME, MAGNESIA ; METALLURGY ; REFRACTORIES ; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES ; SLAG ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; TREATMENT OF NATURAL STONE</subject><creationdate>2012</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20120628&DB=EPODOC&CC=JP&NR=2012121791A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20120628&DB=EPODOC&CC=JP&NR=2012121791A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>GOTO YASUSHI</creatorcontrib><creatorcontrib>IWASAKI YUKI</creatorcontrib><creatorcontrib>YONEDA YOICHIRO</creatorcontrib><creatorcontrib>TOKUHIRA MASAYA</creatorcontrib><title>OXIDE SINTERED BODY AND SPUTTERING TARGET</title><description>PROBLEM TO BE SOLVED: To provide an oxide sintered body which is suitably used in the production of an oxide semiconductor film for a display device, the sintered body concerned having both high conductivity and high relative density and forming an oxide semiconductor film which has high carrier mobility.SOLUTION: The oxide sintered body is obtained by mixing powdered zinc oxide, powdered tin oxide and powdered indium oxide together and then sintering the mixture. In addition, when the sintered body of an oxide is subjected to X-ray diffraction, it has a phase of ZnSnOas a primary phase and a solid solution of In/InO-ZnSnOin which In and/or InOis solid-solved in ZnSnO, and a phase of ZnInO(x, y and z are optional positive integers) is not detected.</description><subject>ARTIFICIAL STONE</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CABLES</subject><subject>CEMENTS</subject><subject>CERAMICS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS</subject><subject>CONCRETE</subject><subject>CONDUCTORS</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>INSULATORS</subject><subject>LIME, MAGNESIA</subject><subject>METALLURGY</subject><subject>REFRACTORIES</subject><subject>SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES</subject><subject>SLAG</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>TREATMENT OF NATURAL STONE</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2012</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZND0j_B0cVUI9vQLcQ1ydVFw8neJVHD0c1EIDggNAQp5-rkrhDgGubuG8DCwpiXmFKfyQmluBiU31xBnD93Ugvz41OKCxOTUvNSSeK8AIwNDIyA0tzR0NCZKEQB1iiTM</recordid><startdate>20120628</startdate><enddate>20120628</enddate><creator>GOTO YASUSHI</creator><creator>IWASAKI YUKI</creator><creator>YONEDA YOICHIRO</creator><creator>TOKUHIRA MASAYA</creator><scope>EVB</scope></search><sort><creationdate>20120628</creationdate><title>OXIDE SINTERED BODY AND SPUTTERING TARGET</title><author>GOTO YASUSHI ; IWASAKI YUKI ; YONEDA YOICHIRO ; TOKUHIRA MASAYA</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_JP2012121791A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2012</creationdate><topic>ARTIFICIAL STONE</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CABLES</topic><topic>CEMENTS</topic><topic>CERAMICS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS</topic><topic>CONCRETE</topic><topic>CONDUCTORS</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>INSULATORS</topic><topic>LIME, MAGNESIA</topic><topic>METALLURGY</topic><topic>REFRACTORIES</topic><topic>SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES</topic><topic>SLAG</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>TREATMENT OF NATURAL STONE</topic><toplevel>online_resources</toplevel><creatorcontrib>GOTO YASUSHI</creatorcontrib><creatorcontrib>IWASAKI YUKI</creatorcontrib><creatorcontrib>YONEDA YOICHIRO</creatorcontrib><creatorcontrib>TOKUHIRA MASAYA</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>GOTO YASUSHI</au><au>IWASAKI YUKI</au><au>YONEDA YOICHIRO</au><au>TOKUHIRA MASAYA</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>OXIDE SINTERED BODY AND SPUTTERING TARGET</title><date>2012-06-28</date><risdate>2012</risdate><abstract>PROBLEM TO BE SOLVED: To provide an oxide sintered body which is suitably used in the production of an oxide semiconductor film for a display device, the sintered body concerned having both high conductivity and high relative density and forming an oxide semiconductor film which has high carrier mobility.SOLUTION: The oxide sintered body is obtained by mixing powdered zinc oxide, powdered tin oxide and powdered indium oxide together and then sintering the mixture. In addition, when the sintered body of an oxide is subjected to X-ray diffraction, it has a phase of ZnSnOas a primary phase and a solid solution of In/InO-ZnSnOin which In and/or InOis solid-solved in ZnSnO, and a phase of ZnInO(x, y and z are optional positive integers) is not detected.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | ARTIFICIAL STONE BASIC ELECTRIC ELEMENTS CABLES CEMENTS CERAMICS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS CONCRETE CONDUCTORS DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL INSULATORS LIME, MAGNESIA METALLURGY REFRACTORIES SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES SLAG SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TREATMENT OF NATURAL STONE |
| title | OXIDE SINTERED BODY AND SPUTTERING TARGET |
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