ELECTROMAGNETIC CASTING METHOD FOR SILICON INGOT

PROBLEM TO BE SOLVED: To provide an electromagnetic casting method for silicon ingot, capable of reducing dangerousness generated by dust explosion when the inside of a chamber used for casting of a silicon ingot is cleaned.SOLUTION: The electromagnetic casting method for silicon ingot includes char...

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Hauptverfasser: SUGIMURA WATARU, NAITO NORIMASA
Format: Patent
Sprache:eng
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Zusammenfassung:PROBLEM TO BE SOLVED: To provide an electromagnetic casting method for silicon ingot, capable of reducing dangerousness generated by dust explosion when the inside of a chamber used for casting of a silicon ingot is cleaned.SOLUTION: The electromagnetic casting method for silicon ingot includes charging a silicon material into a non-bottom cooling crucible having electric conductivity and arranged in a chamber maintained by an inert gas atmosphere, melting the silicon material by electromagnetic induction heating from an induction coil surrounding a non-bottom cooling crucible, and solidifying the molten silicon material while pulling it down from the non-bottom cooling crucible. In the electromagnetic casting method, the inside of a chamber used for casting silicon ingot doped with phosphorous is cleaned at a temperature of an inert gas atmosphere of 200°C or lower in an opened chamber; and the inside of a chamber used for casting silicon ingot doped with boron is cleaned at a temperature of the inert gas atmosphere of 400°C or lower in an opened chamber.