SEMICONDUCTOR LIGHT-EMITTING ELEMENT

PROBLEM TO BE SOLVED: To prevent reduction in light extraction efficiency in a semiconductor light-emitting element having auxiliary electrodes.SOLUTION: A semiconductor light-emitting element 1 having a semiconductor stacked structure including a light-emitting layer 12 sandwiched between an n-type semiconductor layer 11 and a p-type semiconductor layer 13 and extracting light from the p-type semiconductor layer 13 side comprises: an n-electrode 30 that is formed so as to contact the n-type semiconductor layer 11 at the p-type semiconductor layer 13 side and includes a seating electrode 30a and linear auxiliary electrodes 30b extending in the in-plane direction from the seating electrode 30a; and a p-electrode 20 that is formed so as to contact the p-type semiconductor layer 13 at the p-type semiconductor layer 13 side and includes a seating electrode 20a and linear auxiliary electrodes 20b extending in the in-plane direction from the seating electrode 20a. At least portions of the auxiliary electrodes 30b and the auxiliary electrodes 20b overlap in the thickness direction of the light-emitting layer 12 via an insulating layer 40.