PATTERNED METAL FILM AND FORMATION METHOD THEREFOR

PROBLEM TO BE SOLVED: To pattern a film of transition metal which is difficult to dry etch so that side etching is minimized.SOLUTION: A barrier layer/adhesion layer is formed on an insulating film (S1), and a seed layer composed of a transition metal is formed thereon (S2). An SiOfilm and a photore...

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1. Verfasser:	GUNJI ISAO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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