PATTERNED METAL FILM AND FORMATION METHOD THEREFOR

PROBLEM TO BE SOLVED: To pattern a film of transition metal which is difficult to dry etch so that side etching is minimized.SOLUTION: A barrier layer/adhesion layer is formed on an insulating film (S1), and a seed layer composed of a transition metal is formed thereon (S2). An SiOfilm and a photoresist film are then formed sequentially on the seed layer (S3, S4), an opening is formed by patterning the photoresist film and the SiOfilm (S5, S6), and a Cu film and a mask Al film are laminated in the opening (S7, S8). Thereafter, the SiOfilm is etched (S9), the exposed seed layer is reformed anisotropically in the film thickness direction (S10), and the reformed seed layer, the exposed barrier/adhesion layer, and the mask Al film are removed sequentially by etching (S10-S13) thus obtaining a patterned metal film.