MANUFACTURING METHODS OF THIN-FILM TRANSISTOR AND ELECTRODE SUBSTRATE FOR DISPLAY DEVICE

PROBLEM TO BE SOLVED: To provide a manufacturing method capable of sufficiently achieving low resistance of a region equivalent to a source region and a drain region of a TAOS layer in a self-aligned TAOS TFT of bottom contact structure, and also to provide a manufacturing method of an electrode substrate for a display device which uses this TAOS TFT.SOLUTION: A manufacturing method of a thin-film transistor comprises: a step of forming a first TAOS layer 16 and a second TAOS layer 17 on a gate electrode 12, a source electrode 14, and a drain electrode 15 so as to link the source electrode 14 and the drain electrode 15 over the gate electrode 12; a step of forming an island-shaped insulating film 18 on the first TAOS layer 16 and the second TAOS layer 17 by exposure from a glass substrate 11 side which uses the gate electrode 12 as a mask; a step of irradiating the whole surface of a glass substrate 11 with plasma from an island-shaped insulating film 18 side using an island-shaped insulating film 18 as a mask; and a step of soaking the first TAOS layer 16 and the second TAOS layer 17 which exposed around the island-shaped insulating film 18 in an alkali solution.