METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To prevent galvanic corrosion on the surface of a copper film due to exposure to water during conveyance of a wafer on which copper interconnections are formed after CMP polishing.SOLUTION: Surface of a copper film 3 is changed to cuprous oxide (CuO)5 insoluble to water by poli...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	MAEDE TAKURO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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