METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
PROBLEM TO BE SOLVED: To prevent galvanic corrosion on the surface of a copper film due to exposure to water during conveyance of a wafer on which copper interconnections are formed after CMP polishing.SOLUTION: Surface of a copper film 3 is changed to cuprous oxide (CuO)5 insoluble to water by poli...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | PROBLEM TO BE SOLVED: To prevent galvanic corrosion on the surface of a copper film due to exposure to water during conveyance of a wafer on which copper interconnections are formed after CMP polishing.SOLUTION: Surface of a copper film 3 is changed to cuprous oxide (CuO)5 insoluble to water by polishing the wafer surface by using a cleaning agent having pH adjusted to 7-12 immediately after a barrier metal film polishing process in the Cu-CMP process when copper interconnections are formed, and an antioxidation film 6 is formed by making an oxidation inhibitor adhere to the surface of CuO5. |
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