MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To reduce a difference of contact depth regardless of the coarse-dense of a gate electrode pattern in a semiconductor device with a silicide film formed on the substrate surface.SOLUTION: A manufacturing method of a semiconductor device 100 includes: a step of forming a silicide film 120a with a silicone oxide film 122a selectively formed on the surface, in an active region 104; a step of forming a liner insulator film 124 having an etching selection ratio with the silicone oxide film 120a, on the silicide film 120a; and a step of forming an insulator film 126 having an etching selection ratio with the liner insulator film 124 on the liner insulator film 124; and a step of forming a first contact hole 144 penetrating through the insulator film 126, the liner insulator film 124, and the silicone oxide film 122a and reaching the silicide film 120a.