METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device by an etching process using laser beam irradiation, which can applied for production of a semiconductor device in wide range requiring the etching process for a complicated shape, deep and large removal region or the...

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Bibliographische Detailangaben
Hauptverfasser: TOTOKAWA SHINJI, TAYA ATSUSHI, KANAMORI KATSUHIKO
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device by an etching process using laser beam irradiation, which can applied for production of a semiconductor device in wide range requiring the etching process for a complicated shape, deep and large removal region or the like, and can obtain high etching rate.SOLUTION: The method for manufacturing a semiconductor device includes: a modified layer forming step for pulse-irradiating a substrate 10 consisting of single crystal silicon with a laser light L by moving a focal position, and partially polycrystallizing the single crystal silicon to form a continuous modified layer 11 in the single crystal silicon; and an etching step for etching the modified layer 11 to remove it.