SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a semiconductor device which both improves reliability of a memory device and suppresses current consumption.SOLUTION: A semiconductor device includes plural magnetic memory cells MC, plural digit lines DL, a digit line drive circuit 28B, plural bit lines BL [0:95]. The plural bit lines BL [0:95] are, for instance, divided into plural groups for each 12 lines. The semiconductor device also includes bit line drive circuits 22L and 22R capable of driving each of the plural bit lines with at least two stages of strength. The bit line drive circuits 22L and 22R, for writing groups, drive the bit lines in the current of a polarity corresponding to writing data with higher strength among two stages and, for non-writing groups, feed data holding current of a polarity corresponding to its own data with lower strength among two stages.