MICROWAVE PLASMA SOURCE AND PLASMA PROCESSING APPARATUS

PROBLEM TO BE SOLVED: To provide a microwave plasma source and a plasma processing apparatus using the same capable of suppressing influence by a standing wave of a microwave in a processing container as much as possible and increasing plasma density uniformity in a chamber.SOLUTION: A microwave pla...

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Bibliographische Detailangaben
Hauptverfasser:	OSADA ISATERU, IKEDA TARO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PLASMA TECHNIQUE PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PROBLEM TO BE SOLVED: To provide a microwave plasma source and a plasma processing apparatus using the same capable of suppressing influence by a standing wave of a microwave in a processing container as much as possible and increasing plasma density uniformity in a chamber.SOLUTION: A microwave plasma source 2 comprises a microwave supply part 40. The microwave supply part 40 comprises: a plurality of microwave introduction mechanisms 43 which introduce the microwave into the processing container; and a plurality of phase shifters 46 which adjust the phases of microwaves input to each of the plurality of microwave introduction mechanisms 43. For the plurality of microwave introduction mechanisms 43 adjacent to each other, the microwave plasma source 2 adjusts the phases of the microwaves input to a plurality of adjacent microwave introduction mechanisms 43 with the plurality of phase shifters 46 so that the input phase of one microwave is fixed and the input phase of the other microwave is changed by a periodic waveform.