SEMICONDUCTOR MEMORY

PROBLEM TO BE SOLVED: To provide a semiconductor memory capable of reading data out at a high speed with low power consumption.SOLUTION: The semiconductor memory includes a high-speed startup circuit as well as a reference amplifier which generates a reference voltage according to an enable signal and supplies the reference voltage to a sense amplifier through a reference voltage supply line. The high-speed startup circuit includes a first FET which turns on when the enable signal indicates deactivation to apply a predetermined first voltage to a first line; a second FET which turns on when the voltage of the reference voltage supply line is higher than a gate threshold voltage value to apply a ground potential to the first line; a third FET which turns on when the enable signal indicates activation to output a first voltage; and a fourth FET which is off while the first line is at the ground potential, and turns on when the first voltage is applied to the first line to supply the first voltage output from the third FET to the reference voltage supply line.